☰ Basic Electronics Engineering (Electrical Engineering) - MCQs

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Q7.

When a transistor is saturated

  • A. the emitter potential is more than the base collector potential
  • B. the collector potential is more than the base emitter potential
  • C. the best potential is more than the emitter collector potential
  • D. the base, emitter and collector are almost at the same potential
    ✍ Discuss    
Q8.

The leakage current in an NPN transistor is due to the flow of

  • A. holes from base to emitter
  • B. electrons from collector to base
  • C. holes from collector to base
  • D. minority carriers from emitter to collector
    ✍ Discuss    
Q9.

In a junction transistor, recombination of electrons and holes occurs in

  • A. base region only
  • B. emitter region only
  • C. collector region only
  • D. all the three regions
    ✍ Discuss    
Q10.

For an npn bipolar transistor, what is the mainstream of current in the base region ?

  • A. drift of holes
  • B. diffusion of holes
  • C. drift of electrons
  • D. diffusion of electrons
    ✍ Discuss    
Q11.

When a PNP transistor is properly biased, the holes from the emitter

  • A. diffuse through the base into the collector region
  • B. recombine with the electrons in the base region
  • C. recombine with the electrons in the emitter region
  • D. diffuse through the emitter to collector
    ✍ Discuss    
Q12.

The impurity commonly used for releasing the base region of silicon N-P-N transistor is

  • A. gallium
  • B. indium
  • C. boron
  • D. phosphorus
    ✍ Discuss    
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