☰ Basic Electronics Engineering (Electrical Engineering) - MCQs

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Q19.

A step-recovery diode

  • A. has an extremely short recovery time
  • B. is mainly used as a harmonic generator
  • C. conducts equally well in both directions
  • D. is an ideal rectifier of high frequency signals
    ✍ Discuss    
Q20.

A tunnel diode is

  • A. high resistivity p-n junction diode
  • B. a slow switching device
  • C. an amplifying device
  • D. very heavily doped p-n junction diode
    ✍ Discuss    
Q21.

For forward biased diode

  • A. transaction capacitance is larger than diffusion capacitance
  • B. diffusion capacitance is larger than transaction capacitance
  • C. both capacitance are having same value
  • D. cannot predict with certainty
    ✍ Discuss    
Q22.

In a semiconductor diode, cut in voltage is the voltage

  • A. upto which the current is zero
  • B. upto which the current is very small
  • C. address the current is 10% of the maximum rated current
  • D. at which deplection layer is formed
    ✍ Discuss    
Q23.

A silicon diode is prefered to a germanium diode because of its

  • A. higher reverse current
  • B. lower reverse current and higher reverse breakdown voltage
  • C. higher reverse current and lower reverse breakdown voltage
  • D. none of the above
    ✍ Discuss    
Q24.

Tthe reserve current of a silicon diode is

  • A. highly bias voltage sensitive
  • B. highly temperature sensitive
  • C. both bais voltage and temperature sensitivity
  • D. independent of bias voltage and temperature
    ✍ Discuss    
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