♡ Login
Home
Previous Papers
★
MCQs
Electrical Engineering
Electrical Engineering Material
the band gap of silicon at room ...
Que.
the band gap of silicon at room temperature is
A.
1.3 eV
B.
0.7 eV
C.
1.1 eV
D.
1.4 eV
Right Answer is :
✓ C. 1.1 eV
⚑ Report
Views 👍 :1.6K
Share :
Copy ☍
✒ To discuss this topic
Comment
✕ Cancel
➤ Post Comment
❖ Related Questions
➣ the principle of hall effect is made ...
➣ the phenomena of restriction occurs when ferromagnetic ...
➣ For a given dielectric, with increase in ...
➣ In ionic crystals, electrical conductivity is ...
➣ the temperature above which and antiferromagnetic material ...
➣ which of the following is not a ...
➣ which of the following is nonpolar dielectric? ...
➣ superconductivity in a material can be destroyed ...
➣ permeance is inversely related to ...
➣ the resistivity of a metal is a ...
❖ Take a qick MCQ Test on
➤ Control System
➤ Analog Electronics
➤ Microprocessors
➤ Switchgear and Protection
➤ Basic Electronics Engineering
➤ Transformers
➤ Electrical and Electronic Instrumentation
➤ Synchronous Machines